Reliability properties of metal-oxide-semiconductor capacitors using HfO2 high-κ dielectric

Abstract

Metal-oxide-semiconductor capacitors with atomic layer deposited HfO2 dielectric were fabricated. The charge-to-breakdown (QBD) characteristics of the metal-oxide-semiconductor structure were investigated. The Weibull slopes β with thicknesses of 9.12, 8.2, and 6.51nm are 3.42, 2.90, and 1.83, respectively. Using the cell-based analytic model, the defect sizes a0 were extracted to be about 0.98 and 1.64nm for exponent σ values of 0.6 and 1, respectively. A comparison with conventional SiO2-gated capacitors was made.