Improved strained GaAsP photocathodes
Yuri A. MamaevA. V. SubashievYuri P. YashinAnton N. AmbrajeiAlexander V. Rochansky
Abstract
The parameters of spin-polarized electron photocathode based on strained layer GaAs0.95P0.05/GaAs0.7P0.3 structure have been improved on the base of X-ray, Raman and polarized photoluminescence studies of such structure. The polarization maximum value 86% in conjunction with Y equals 0.16% makes such cathodes one of the best no matter where.
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