<title>Characterization of chalcogenide glasses for optoelectronics</title>

Abstract

Chalcogenide glasses - Ge25Ga10S65 , Ge25Ga5As5S65 , As2S3 , As2S2Se , As25e3 — have been synthesized and doped with ions of rare earth RE3 , in the concentration range of 500 to 6000 wt.ppm. Special processing makes possible to reduce the hydroxyle content and to incorporate rare earth ions without phase separation. Various physical measurements, including photoluminescence have been implemented. Main observations and results may be summurized as follows: -OHgroup concentration could be lowered below 5x105 mol.% in pure chalcogenide glasses - Rare earth ions are introduced into sulfide glasses at concentrations ranging from 500 to 6000.ppm. Homogeneous and clear samples are obtained up to 3000wt.ppm Pr3+. - Clusters and defects are observed when RE and OH concentrations increases,. -Abackground photoluminescence in based glasses and it depends on temperature.