Nitride-Based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

Jinn‐Kong Sheu; C. J. Kao; M. L. Lee; Wei‐Chih Lai; L. S. Yeh; Nils C. Ger­hardt; Shoou‐Jinn Chang; Yan‐Kuin Su; J.M. Tsai

doi:10.1007/s11664-003-0165-4

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Nitride-Based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

Jinn‐Kong Sheu C. J. Kao M. L. Lee Wei‐Chih Lai L. S. Yeh Nils C. Gerhardt Shoou‐Jinn Chang Yan‐Kuin Su J.M. Tsai

Year: 2003 Journal: Journal of Electronic Materials Vol: 32 (5)Pages: 400-402 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-003-0165-4

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Keywords:

Photodetector Responsivity Materials science Optoelectronics Photocurrent Dark current Ultraviolet Schottky barrier Layer (electronics) Gallium nitride Semiconductor Schottky diode Nanotechnology

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Photocathodes and Microchannel Plates

Physical Sciences → Engineering → Biomedical Engineering

Nitride-Based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

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