&lt;title&gt;InGaAsP Laser Diodes&lt;/title&gt;

G.H. Olsen

doi:10.1117/12.958688

ScienceGate Book Chapters

JOURNAL ARTICLE

<title>InGaAsP Laser Diodes</title>

G.H. Olsen

Year: 1980 Journal: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Vol: 0224 Pages: 113-121 Publisher: SPIE

DOI: 10.1117/12.958688

Get Full-Text PDF Get Analytical Report

Abstract

The advantages and properties of InGaAsP laser diodes in the 1.0 - 1.7 μm spectral region are discussed. The structure, growth (both vapor and liquid phase epitaxy) and operating principles of these devices are briefly reviewed. State of the art device results from 1.3 and 1.55 μm devices are then presented. The modal, thermal and reliability properties of these devices, as well as their commercial availability, are also discussed and possible directions for future applications are considered.

Keywords:

Diode Optoelectronics Laser Gallium arsenide Materials science Physics Optics

Metrics

Cited By

0.47

FWCI (Field Weighted Citation Impact)

Refs

0.58

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

<title>InGaAsP Laser Diodes</title>

Abstract

Metrics

Topics

Related Documents

<title>ZnMgSSe-based laser diodes</title>

<title>Interferometry with laser diodes</title>

<title>Dynamic characteristics and reliability of gain-coupled InGaAsP laser diodes</title>

<title>Current fluctuations in laser diodes</title>

<title>Single-Mode AlGaAs Laser Diodes</title>