Growth mechanism of In1−xGaxP and In1−xAlxP in metalorganic molecular beam epitaxy

Kazunari Ozasa; Masaaki Yuri; Shigehisa Tanaka; Hiroyuki Matsunami

doi:10.1016/0022-0248(89)90375-8

ScienceGate Book Chapters

JOURNAL ARTICLE

Growth mechanism of In1−xGaxP and In1−xAlxP in metalorganic molecular beam epitaxy

Kazunari Ozasa Masaaki Yuri Shigehisa Tanaka Hiroyuki Matsunami

Year: 1989 Journal: Journal of Crystal Growth Vol: 95 (1-4)Pages: 171-175 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(89)90375-8

Get Full-Text PDF Get Analytical Report

Keywords:

Molecular beam epitaxy Epitaxy Mechanism (biology) Chemistry Metalorganic vapour phase epitaxy Mineralogy Materials science Analytical Chemistry (journal) Optoelectronics Crystallography Nanotechnology Physics Environmental chemistry

Metrics

Cited By

1.03

FWCI (Field Weighted Citation Impact)

Refs

0.74

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Growth mechanism of In1−xGaxP and In1−xAlxP in metalorganic molecular beam epitaxy

Metrics

Topics

Related Documents

Metalorganic vapor phase epitaxial growth of In1−xGaxP

Growth of homogeneous bulk In1-xGaxP

In1−xGaxP Bulk crystal growth and In1−xGaxPepitaxial growth on In1−xGaxP substrate by the temperature difference method under controlled vapor pressure

Vapor-solid distribution in In1−xGaxAs and In1−xGaxP alloys grown by atomic layer epitaxy

Phase equilibria and the growth of In1−xGaxP by Peltier-induced liquid phase epitaxy