Q WangJ J LiY JXiaodong BaiZ L WangPengpeng XuChengyong ShiBaogang QuanS.L. YueCong Gu
Silicon nanocone arrays are formed on porous silicon substrates by plasma etching in a hot filament chemical vapour deposition system. The as-formed Si nanocones were characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, energy dispersive x-ray analysis, and Raman spectroscopy. The results indicate that the nanocone is composed of a silicon core coated with a thin amorphous carbon (a-C) layer produced by carbon-bearing plasma etching. Plasma etching is a key factor in the formation of the nanocone arrays, while re-condensation of evaporated silicon atoms on the tip of the as-etched cone also occurs. Field emission measurements show that the a-C coating can effectively enhance the field emission ability of the nanocone arrays due to the decrease of the surface work function from 4.15 to 2.37 eV.
CaiHui ShiQi WangShuang YueChang Zhi Gu
Chengyong ShiQi WangShuang YueChang Zhi Gu
Weidong LiuXue YaoguoZhu Chang-chun
Lujun PanShoji TakeuchiAtsuko NagatakiY. Nakayama
W. K. WongFei MengQuan LiFrederick AuI. BelloS. T. Lee