Optical bistability in hydrogenated amorphous silicon

John Tann; M. Ga�l; K. D. Meaney; P. C. Taylor

doi:10.1063/1.103183

ScienceGate Book Chapters

JOURNAL ARTICLE

Optical bistability in hydrogenated amorphous silicon

John Tann M. Ga�l K. D. Meaney P. C. Taylor

Year: 1990 Journal: Applied Physics Letters Vol: 56 (11)Pages: 1017-1018 Publisher: American Institute of Physics

DOI: 10.1063/1.103183

Get Full-Text PDF Get Analytical Report

Abstract

Room-temperature optical bistability has been demonstrated in hydrogenated amorphous silicon at wavelengths greater than about 700 nm. Switching powers as low as 0.8 mW (switching intensities 1.7 kW/cm2) are observed. The measured switching times are found to be compound, with time constants from 50 μs to 1 ms.

Keywords:

Bistability Optical bistability Amorphous silicon Materials science Silicon Optoelectronics Wavelength Amorphous solid Optical switch Optics Crystalline silicon Nonlinear optics Chemistry Crystallography Physics Laser

Metrics

Cited By

1.72

FWCI (Field Weighted Citation Impact)

Refs

0.85

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Magneto-Optical Properties and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Optical bistability in hydrogenated amorphous silicon

Abstract

Metrics

Topics

Related Documents

Room temperature optical bistability in hydrogenated amorphous silicon-carbon alloys

Hydrogenated Amorphous Silicon - Optical Properties

Optical recording in hydrogenated amorphous silicon

Optical spectroscopy of hydrogenated amorphous silicon

OPTICAL ABSORPTION IN AMORPHOUS HYDROGENATED SILICON