Photoluminescence spectra of In-doped ZnSe single crystals

Abstract

High-purity zinc selenide single crystals have been doped with indium in the concentration range from 0.03 to 30 p.p.m. by means of the vapour-phase transport technique. The concentration of indium has been precisely determined by thermal neutron activation analysis. The photoluminescence (PL) spectra measured at 4.2K show the I2 line, donor-acceptor pair emission lines and two broad emission bands around 1.98 and 2.20 eV. The emission intensities are found to be strongly affected by the native defect concentrations. The temperature dependence of the PL spectrum suggests that the 1.98 eV emission band is a self-activated emission related to an associated defect involving InZn and a zinc vacancy.