Etching of high aspect ratio structures in Si using SF6/O2 plasma

Abstract

We have investigated etching of deep (∼10 μm) submicron diameter holes with high aspect ratios (>10) using plasmas maintained in mixtures of SF6 and O2 gases. The etching experiments were conducted in a low-pressure (5–80 mTorr), high-density, inductively coupled plasma etching reactor with a planar coil. We have studied the effects of pressure, rf-bias voltage, and SF6-to-O2 gas ratio on the etch rate, selectivity, and feature profile using Si wafers patterned with 0.35–0.5 μm diameter holes in a SiO2 mask. Visualization of the profiles with scanning electron microscopy is used in conjunction with plasma diagnostics such as optical emission and mass spectroscopies to understand the key factors that control the anisotropy, selectivity, and etch rate. The F-to-ion flux ratio and F-to-O flux ratio are found to be the important plasma parameters that determine the etch rate and anisotropy. Increasing the SF6-to-O2 ratio in the feed gas increases the F-to-O ratio in the plasma. At high SF6-to-O2 ratio, the mask undercut is severe because sidewall passivation by O atoms cannot keep up with the chemical etching by F atoms. As the F-to-O ratio is decreased, effective sidewall passivation by O atoms results in nearly vertical sidewalls. A further reduction in the F-to-O ratio results in sidewalls that slope inwards toward the bottom of the feature.