Predominant defects in semiconductor isovalent solid solutions: Pb_{1 –y}(Se_xTe_{1 –x})_y, Pb_{1 –y}(S_xTe_{1 –x})_yand Pb_{1 –y}(S_xSe_{1 –x})_y

Abstract

Isovalent ternary solid solutions of AIVBVI materials such as Pb1 –y(SxSe1 –x)y, Pb1 –y(SxTe1 –x)y, and Pb1 –y(SexTe1 –x)y can been used as lattice-matched heterostructures for IR lasers and detectors. The solid/vapour equilibrium has been studied by the method of rapid quenching of crystals of solid solutions prepared by three-zone furnace annealing at fixed T, PPb and PPbX. Hall-coefficient and lattice-constant measurements on quenched samples were analysed as functions of T and PPb. The curves of n, p as functions of T and PPb were used to determine the degree of ionization of defects and to calculate the constants of Frenkel disordering in the form: K=K0 exp(–ΔH/kBT).