JOURNAL ARTICLE
Alloy inhomogeneities in InAlAs strained layers grown by molecular-beam epitaxy
F. PeiróA. CornetJ.R. MoranteS. A. ClarkRachel Williams
Year: 1992 Journal: Journal of Applied Physics Vol: 71 (5)Pages: 2470-2471 Publisher: American Institute of Physics
Abstract
Transmission electron microscopy studies have been performed to characterize InxAl1−xAs layers grown by molecular-beam epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics.
Keywords:
Molecular beam epitaxy Transmission electron microscopy Materials science Quasiperiodic function Epitaxy Optoelectronics Alloy Quantum well X-ray absorption spectroscopy Superlattice Optics Condensed matter physics Nanotechnology Absorption spectroscopy Layer (electronics) Metallurgy Physics
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7
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1.07
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7
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0.74
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Citation History
Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Advanced Semiconductor Detectors and Materials
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advanced Materials Characterization Techniques
Physical Sciences → Engineering → Biomedical Engineering
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