Molecular beam epitaxial growth of lattice matched GaAs/ErP0.6As0.4/(001) and (111) GaAs heterostructures

J. Caulet; Alain Le Corre; B. Guenais; Guy Ropars; A. Guivarc’h

doi:10.1016/0022-0248(90)90916-9

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Molecular beam epitaxial growth of lattice matched GaAs/ErP0.6As0.4/(001) and (111) GaAs heterostructures

J. Caulet Alain Le Corre B. Guenais Guy Ropars A. Guivarc’h

Year: 1990 Journal: Journal of Crystal Growth Vol: 102 (1-2)Pages: 309-313 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(90)90916-9

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Keywords:

Heterojunction Molecular beam epitaxy Epitaxy Electron diffraction Materials science Optoelectronics Diffraction Layer (electronics) Crystal growth Fabrication Reflection high-energy electron diffraction Crystallography Chemistry Optics Nanotechnology Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum and electron transport phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Molecular beam epitaxial growth of lattice matched GaAs/ErP0.6As0.4/(001) and (111) GaAs heterostructures

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