JOURNAL ARTICLE

Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots

Leiqiang ChuA. ZrennerG. BöhmG. Abstreiter

Year: 1999 Journal:   Applied Physics Letters Vol: 75 (23)Pages: 3599-3601   Publisher: American Institute of Physics

Abstract

We report on intersubband photocurrent spectroscopy of self-assembled InAs/GaAs quantum dots (QDs) both in normal incidence and in multipass waveguide geometry. The bound-to-continuum transition energy in the conduction band lies in the 200–500 meV spectral range. Polarization dependent photocurrent spectroscopy shows that the intersubband transitions in the InAs-QDs are nearly independent of the polarization of the incoming radiation.

Keywords:
Photocurrent Spectroscopy Quantum dot Optoelectronics Polarization (electrochemistry) Gallium arsenide Photoconductivity Materials science Condensed matter physics Physics Chemistry

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7.75
FWCI (Field Weighted Citation Impact)
13
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0.99
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Citation History

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Advanced Semiconductor Detectors and Materials
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor Lasers and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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