JOURNAL ARTICLE

Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties

Yangfang LiGuowen MengLinjie ZhangF. Phillipp

Year: 2000 Journal:   Applied Physics Letters Vol: 76 (15)Pages: 2011-2013   Publisher: American Institute of Physics

Abstract

Ordered semiconductor ZnO nanowire arrays embedded in anodic alumina membranes (AAM) were fabricated by generating alumina templates with nanochannels, electrodepositing Zn in them, and then oxidizing the Zn nanowire arrays. The polycrystalline ZnO nanowires with the diameters ranging from 15 to 90 nm were uniformly assembled into the hexagonally ordered nanochannels of the AAM. Photoluminescence (PL) measurements show a blue PL band in the wavelength range of 450–650 nm caused by the singly ionized oxygen vacancy in ZnO nanowires.

Keywords:
Nanowire Photoluminescence Materials science Crystallite Semiconductor Optoelectronics Wide-bandgap semiconductor Oxidizing agent Nanotechnology Metallurgy Chemistry

Metrics

991
Cited By
27.17
FWCI (Field Weighted Citation Impact)
18
Refs
1.00
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry
Anodic Oxide Films and Nanostructures
Physical Sciences →  Materials Science →  Materials Chemistry
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials

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