Low defect density CdTe(111)-GaAs(001) heterostructures by molecular beam epitaxy

J. M. Ballingall; W. J. Takei; Bernard J. Feldman

doi:10.1063/1.96084

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Low defect density CdTe(111)-GaAs(001) heterostructures by molecular beam epitaxy

J. M. Ballingall W. J. Takei Bernard J. Feldman

Year: 1985 Journal: Applied Physics Letters Vol: 47 (6)Pages: 599-601 Publisher: American Institute of Physics

DOI: 10.1063/1.96084

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Abstract

(111) oriented CdTe has been grown on (001) oriented GaAs substrates by molecular beam epitaxy. Double crystal x-ray diffraction rocking curve and photoluminescence measurements indicate that the CdTe is of exceptional quality despite the large lattice mismatch of 14.6%.

Keywords:

Molecular beam epitaxy Heterojunction Cadmium telluride photovoltaics Photoluminescence Materials science Diffraction Optoelectronics Epitaxy X-ray crystallography Lattice constant Crystallography Optics Chemistry Nanotechnology Physics

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Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

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Low defect density CdTe(111)-GaAs(001) heterostructures by molecular beam epitaxy

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