Room temperature growth of wafer-scale silicon nanowire arrays and their Raman characteristics

Dinesh Kumar; Sanjay K. Srivastava; Prashant Singh; K.N. Sood; Vidya Nand Singh; Nita Dilawar; M. Husain

doi:10.1007/s11051-009-9795-7

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Room temperature growth of wafer-scale silicon nanowire arrays and their Raman characteristics

Dinesh Kumar Sanjay K. Srivastava Prashant Singh K.N. Sood Vidya Nand Singh Nita Dilawar M. Husain

Year: 2009 Journal: Journal of Nanoparticle Research Vol: 12 (6)Pages: 2267-2276 Publisher: Springer Science+Business Media

DOI: 10.1007/s11051-009-9795-7

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Keywords:

Materials science Wafer Raman spectroscopy Etching (microfabrication) Silicon Scanning electron microscope Nanowire Substrate (aquarium) Reactive-ion etching Analytical Chemistry (journal) Transmission electron microscopy Nanotechnology Isotropic etching Crystalline silicon Optoelectronics Optics Composite material Layer (electronics) Chemistry

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Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Room temperature growth of wafer-scale silicon nanowire arrays and their Raman characteristics

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