Noise characteristics of stacked CMOS active pixel sensor for charged particles

T. Kunihiro; K. Nagashima; Isao Takayanagi; Junichi Nakamura; Koji Kosaka; Hisayoshi Yurimoto

doi:10.1016/s0168-9002(01)00795-1

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Noise characteristics of stacked CMOS active pixel sensor for charged particles

T. Kunihiro K. Nagashima Isao Takayanagi Junichi Nakamura Koji Kosaka Hisayoshi Yurimoto

Year: 2001 Journal: Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment Vol: 470 (3)Pages: 512-519 Publisher: Elsevier BV

DOI: 10.1016/s0168-9002(01)00795-1

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Keywords:

CMOS Noise (video) CMOS sensor Pixel Charged particle Materials science Optoelectronics Physics Optics Computer science Artificial intelligence Ion

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CCD and CMOS Imaging Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Particle Detector Development and Performance

Physical Sciences → Physics and Astronomy → Nuclear and High Energy Physics

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Noise characteristics of stacked CMOS active pixel sensor for charged particles

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