Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

Philip Hens; Valdas Jokubavičius; Rickard Liljedahl; G. Wagner; R. Yakimova; Peter J. Wellmann; Mikael Syväjärvi

doi:10.1016/j.matlet.2011.09.109

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Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

Philip Hens Valdas Jokubavičius Rickard Liljedahl G. Wagner R. Yakimova Peter J. Wellmann Mikael Syväjärvi

Year: 2011 Journal: Materials Letters Vol: 67 (1)Pages: 300-302 Publisher: Elsevier BV

DOI: 10.1016/j.matlet.2011.09.109

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Keywords:

Sublimation (psychology) Materials science Silicon carbide Chemical vapor deposition Silicon Monocrystalline silicon Optoelectronics Full width at half maximum Nanotechnology Composite material

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

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