Photochemical removal of organic contaminants from silicon surface at room temperature

Abstract

Using in situ x-ray photoelectron spectroscopy we have investigated the possibility of photochemical organic contaminant removal from a silicon surface at room temperature in oxygen and fluorine containing atmospheres (O2, NF3/H<thin>2, O2/NF3/H2). In contrast to UV irradiation in O2 and NF3/H2 reagents, the possibility of complete organic contaminant removal has been observed in O2/NF3/H2 gas mixture.