Synthesis and transport properties of Si-doped In2O3(ZnO)3 superlattice nanobelts

Abstract

Si-doped In2O3(ZnO)3 superlattice nanobelts were synthesized viachemical vapor deposition. The transmission electron microscopy result indicates that the nanobelts have a superlattice structure. The introduced Si in In2O3(ZnO)3 nanobelts could exist as SiZn as donor dopants, leading to a low resistivity of 6.25 × 10−3 Ω cm. The transport properties of the nanobelts were measured. A nonlinear I–V characteristic is found in a voltage span of 0.4–1.5 V, which is likely attributed to the superlattice structure with statistical potential distribution around the conduction band edge.