Novel laser scribed graphene devices

Abstract

Wafer-scale graphene devices could be fabricated by one step laser scribing method. Four kinds of novel laser scribed graphene devices have been developed, including in-plane transistors, photodetectors, loudspeakers and strain sensors. The in-plane graphene transistors have a large on/off ratio up to 5.34. The graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. The graphene strain sensor has the gauge factor of 0.11. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based devices.