JOURNAL ARTICLE

Growth of nanoscale InGaN self-assembled quantum dots

Keywords:
Metalorganic vapour phase epitaxy Photoluminescence Optoelectronics Quantum dot Chemical vapor deposition Interrupt Materials science Nanoscopic scale Nitride Nanotechnology Epitaxy Layer (electronics) Computer science Telecommunications

Metrics

59
Cited By
3.98
FWCI (Field Weighted Citation Impact)
20
Refs
0.95
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Metal and Thin Film Mechanics
Physical Sciences →  Engineering →  Mechanics of Materials
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials

Related Documents

JOURNAL ARTICLE

Growth of InGaN self-assembled quantum dots and their application to photodiodes

Liang‐Wen JiY.K. SuSue-Joan ChangShin‐Li TsaiShang-Chao HungRicky W. ChuangTe‐Hua FangT. Y. Tsai

Journal:   Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Year: 2004 Vol: 22 (3)Pages: 792-795
JOURNAL ARTICLE

Growth of InGaN self-assembled quantum dots and their application to lasers

Kota TachibanaTakao SomeyaYasuhiko Arakawa

Journal:   IEEE Journal of Selected Topics in Quantum Electronics Year: 2000 Vol: 6 (3)Pages: 475-481
JOURNAL ARTICLE

Fabrication and characterization of self-assembled InGaN quantum dots by periodic interrupted growth

Seung-Kyu ChoiJae‐Min JangSung-Hak YiJung-A KimWoo‐Gwang Jung

Journal:   Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Year: 2007 Vol: 6479 Pages: 64791F-64791F
© 2026 ScienceGate Book Chapters — All rights reserved.