Growth of nanoscale InGaN self-assembled quantum dots

Liang‐Wen Ji; Yuezeng Su; Shoou‐Jinn Chang; Liang Wu; Te‐Hua Fang; J.F. Chen; T. Y. Tsai; Qianzhong Xue; S.C. Chen

doi:10.1016/s0022-0248(02)02130-9

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Growth of nanoscale InGaN self-assembled quantum dots

Liang‐Wen Ji Yuezeng Su Shoou‐Jinn Chang Liang Wu Te‐Hua Fang J.F. Chen T. Y. Tsai Qianzhong Xue S.C. Chen

Year: 2003 Journal: Journal of Crystal Growth Vol: 249 (1-2)Pages: 144-148 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(02)02130-9

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Keywords:

Metalorganic vapour phase epitaxy Photoluminescence Optoelectronics Quantum dot Chemical vapor deposition Interrupt Materials science Nanoscopic scale Nitride Nanotechnology Epitaxy Layer (electronics) Computer science Telecommunications

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Growth of nanoscale InGaN self-assembled quantum dots

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