Light-induced effect in GaAs MESFETs

G.J. Chaturvedi; R. Gulati; Preeti Trivedi; G. Hema Chandra; H.S. Sharma; Ishwar Chandra; B. L. Sharma

doi:10.1016/0020-0891(83)90070-2

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Light-induced effect in GaAs MESFETs

G.J. Chaturvedi R. Gulati Preeti Trivedi G. Hema Chandra H.S. Sharma Ishwar Chandra B. L. Sharma

Year: 1983 Journal: Infrared Physics Vol: 23 (5)Pages: 235-237 Publisher: Pergamon Press

DOI: 10.1016/0020-0891(83)90070-2

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Keywords:

Materials science Schottky diode Photodetection Optoelectronics Schottky barrier MESFET Gallium arsenide Schottky effect Photodetector Transistor Field-effect transistor Electrical engineering Voltage

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Light-induced effect in GaAs MESFETs

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