Self-Organized Formation of Hexagonal Hollow Arrays in Anodic GaAs

Abstract

The dependence of the structural properties on the anodization conditions was investigated to gain insights into the formation conditions of ordered hollow arrays on GaAs surfaces. The microscopic surface features were observed by a secondary electron microscope. Honeycomb hollows were formed on the substrate surfaces anodized with an appropriate bias voltage between the substrate and the platinum electrode under the illumination of W lamp. Ordered hexagonal hollows with the average diameter and standard distribution of 200 and 19 nm were obtained for the sample prepared by the anodization with the bias voltage of 12 V under the illumination of W lamp in an NH 4 OH solution (29 wt%) at 0°C.