Optical properties in InGaN/GaN multiple quantum wells and blue LEDs

Y.K. Su; G.C. Chi; Jinn‐Kong Sheu

doi:10.1016/s0925-3467(99)00138-x

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Optical properties in InGaN/GaN multiple quantum wells and blue LEDs

Y.K. Su G.C. Chi Jinn‐Kong Sheu

Year: 2000 Journal: Optical Materials Vol: 14 (3)Pages: 205-209 Publisher: Elsevier BV

DOI: 10.1016/s0925-3467(99)00138-x

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Keywords:

Light-emitting diode Optoelectronics Blueshift Materials science Diode Quantum well Full width at half maximum Metalorganic vapour phase epitaxy Epitaxy Blue laser Blue light Photoluminescence Quantum-confined Stark effect Optics Laser Nanotechnology Physics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Optical properties in InGaN/GaN multiple quantum wells and blue LEDs

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