Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3

M. Kraini; N. Bouguila; I. Halidou; A. Timoumi; S. Alaya

doi:10.1016/j.mssp.2013.04.021

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Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3

M. Kraini N. Bouguila I. Halidou A. Timoumi S. Alaya

Year: 2013 Journal: Materials Science in Semiconductor Processing Vol: 16 (6)Pages: 1388-1396 Publisher: Elsevier BV

DOI: 10.1016/j.mssp.2013.04.021

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Keywords:

Materials science Crystallite Analytical Chemistry (journal) Electrical resistivity and conductivity Band gap Indium Thin film Thiourea Grain size Nanocrystal Quartz Nanotechnology Metallurgy

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Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3

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