Large-Area Organosilicon Film Deposition Using Cyclonic Atmospheric Pressure Glow Discharge

Abstract

Cyclonic atmospheric pressure plasma is developed for chamberless deposition of organosilicon thin films from argon/hexamethyldisoxane (HMDSO) mixtures. The surface properties of the resulting plasma films were investigated as a function of RF plasma power. Film characterization was performed by static contact angle measurement, scanning electron microscopy (SEM), atomic forced microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). It was found the RF plasma power is the key factor that to affects the film growth in the atmospheric pressure plasma chemical vapor deposition process. SEM and AFM results indicated that a smooth, continuous, and uniform surface of organosilicon thin films can be formed at a relatively low plasma power input. XPS indicated that atmospheric-pressure plasma-deposited organosilicon films present mainly inorganic characteristics. This study shows a potential of chamberless film growth at atmospheric pressure to form organosilicon thin films for large-area deposition.