JOURNAL ARTICLE

Atmospheric pressure chemical vapor deposition of aluminum nitride thin films at 200–250 °C

Roy G. GordonDavid M. HoffmanUmar Riaz

Year: 1991 Journal:   Journal of materials research/Pratt's guide to venture capital sources Vol: 6 (1)Pages: 5-7   Publisher: Springer Nature
Keywords:
Rutherford backscattering spectrometry Materials science X-ray photoelectron spectroscopy Chemical vapor deposition Analytical Chemistry (journal) Ellipsometry Thin film Transmission electron microscopy Amorphous solid Nitride Silicon nitride Carbon nitride Combustion chemical vapor deposition Carbon film Silicon Chemical engineering Composite material Nanotechnology Metallurgy Crystallography Layer (electronics) Chemistry Organic chemistry

Metrics

50
Cited By
2.05
FWCI (Field Weighted Citation Impact)
15
Refs
0.88
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Metal and Thin Film Mechanics
Physical Sciences →  Engineering →  Mechanics of Materials

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