Atmospheric pressure chemical vapor deposition of aluminum nitride thin films at 200–250 °C

Roy G. Gordon; David M. Hoffman; Umar Riaz

doi:10.1557/jmr.1991.0005

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Atmospheric pressure chemical vapor deposition of aluminum nitride thin films at 200–250 °C

Roy G. Gordon David M. Hoffman Umar Riaz

Year: 1991 Journal: Journal of materials research/Pratt's guide to venture capital sources Vol: 6 (1)Pages: 5-7 Publisher: Springer Nature

DOI: 10.1557/jmr.1991.0005

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Keywords:

Rutherford backscattering spectrometry Materials science X-ray photoelectron spectroscopy Chemical vapor deposition Analytical Chemistry (journal) Ellipsometry Thin film Transmission electron microscopy Amorphous solid Nitride Silicon nitride Carbon nitride Combustion chemical vapor deposition Carbon film Silicon Chemical engineering Composite material Nanotechnology Metallurgy Crystallography Layer (electronics) Chemistry Organic chemistry

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Topics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Atmospheric pressure chemical vapor deposition of aluminum nitride thin films at 200–250 °C

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Citation History

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