Characterization of MOVPE InN films grown on 3c‐SiC/Si(111) templates

Abstract

Abstract An experimental study has been made on the correlation between the fabrication conditions for 3c‐SiC/Si (111) template and electrical and crystallographic properties of InN films grown on the templates. The template has been prepared by C + ‐ion implantation into Si (111). Although the 3c‐SiC layers show a large (170 arcmin) FWHM of XRC (111) diffraction, InN films with a considerably small (about 50 arcmin) FWHMs for (0002) and (10‐10) diffraction are grown on the layers. A lower implantation dose brings a smaller XRC FWHMs for 3c‐SiC. The post implantation annealing is found to be effective to improve the quality of the 3c‐SiC layer and, therefore, to improve the quality of InN films. Hall mobility in InN is found to be markedly increased by decreasing FWHM of InN (0002) diffraction. The best data of carrier concentration and Hall mobility are 6.2×10 18 cm –3 and 630 cm 2 /Vs, respectively. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)