Design Optimization Methodology Based on Inversion Coefficient Parameter for CMOS RF Circuits

Abdellah Idrissi Ouali; Ahmed El Oualkadi; Mohamed Moussaoui; Yassin Laaziz

doi:10.1007/s13369-014-1429-4

ScienceGate Book Chapters

JOURNAL ARTICLE

Design Optimization Methodology Based on Inversion Coefficient Parameter for CMOS RF Circuits

Abdellah Idrissi Ouali Ahmed El Oualkadi Mohamed Moussaoui Yassin Laaziz

Year: 2014 Journal: Arabian Journal for Science and Engineering Vol: 39 (12)Pages: 8935-8946 Publisher: Springer Science+Business Media

DOI: 10.1007/s13369-014-1429-4

Get Full-Text PDF Get Analytical Report

Keywords:

CMOS Electronic engineering Linearity Radio frequency Transistor Design flow Engineering Bandwidth (computing) Inversion (geology) Integrated circuit design Electrical engineering Computer science Voltage Telecommunications

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.07

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Radio Frequency Integrated Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electrostatic Discharge in Electronics

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Design Optimization Methodology Based on Inversion Coefficient Parameter for CMOS RF Circuits

Metrics

Citation History

Topics

Related Documents

Optimization Methodology Based on IC Parameter for the Design of Radio-Frequency Circuits in CMOS Technology

Inversion-Coefficient Based Design of RF CMOS Low-Noise Amplifiers

Design methodology using inversion coefficient for low-voltage low-power CMOS voltage reference

Design Optimization Methodology for Ultra Low Power Analog Circuits using Intuitive Inversion-level and Saturation-level Parameter

Inversion-Coefficient-Aware Yield Optimization of Analog Circuits