Surface oxide relationships to band bending in GaN

Abstract

A trend of increased near-surface valence band maximum band bending with increasing O∕Ga relative fraction was observed, extrapolating to 2.7eV±0.1eV for pristine GaN surfaces (0% O 1s peak area). This trend of apparent oxide overlayer coverage affecting the band bending linearly could lead to better understanding and characterization of oxidized GaN surfaces to control band bending for sensors or other devices.