Epitaxial growth of SiGe thin films by ion-beam sputtering

Kimihiro Sasaki; Keiichi Nakata; Tomonobu Hata

doi:10.1016/s0169-4332(96)00802-1

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Epitaxial growth of SiGe thin films by ion-beam sputtering

Kimihiro Sasaki Keiichi Nakata Tomonobu Hata

Year: 1997 Journal: Applied Surface Science Vol: 113-114 Pages: 43-47 Publisher: Elsevier BV

DOI: 10.1016/s0169-4332(96)00802-1

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Keywords:

Epitaxy Materials science Sputtering Substrate (aquarium) Reflection high-energy electron diffraction Crystallinity Layer (electronics) Optoelectronics Thin film Molecular beam epitaxy Crystallography Nanotechnology Composite material Chemistry

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Epitaxial growth of SiGe thin films by ion-beam sputtering

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