JOURNAL ARTICLE

Epitaxial growth of SiGe thin films by ion-beam sputtering

Kimihiro SasakiKeiichi NakataTomonobu Hata

Year: 1997 Journal:   Applied Surface Science Vol: 113-114 Pages: 43-47   Publisher: Elsevier BV
Keywords:
Epitaxy Materials science Sputtering Substrate (aquarium) Reflection high-energy electron diffraction Crystallinity Layer (electronics) Optoelectronics Thin film Molecular beam epitaxy Crystallography Nanotechnology Composite material Chemistry

Metrics

12
Cited By
0.47
FWCI (Field Weighted Citation Impact)
9
Refs
0.59
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Thin-Film Transistor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Ion-surface interactions and analysis
Physical Sciences →  Engineering →  Computational Mechanics

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BOOK-CHAPTER

Epitaxial Growth of SiGe Thin Films

Guilei Wang

Springer theses Year: 2019 Pages: 23-48
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