TCAD degradation modeling for LDMOS transistors

Abstract

Physically-based models of hot-carrier stress and dielectric field-enhanced thermal damage have been incorporated in the framework of a TCAD tool with the aim of investigating the electrical stress degradation in integrated power devices over an extended range of stress biases and ambient temperatures. An analytical formulation of the distribution function accounting for the effects of the full band structure has been employed for the hot-carrier modeling. A quantitative understanding of the kinetics and local distribution of degradation are achieved, and the drift of the most relevant parameters is nicely predicted on an extended range of stress times and biases.