JOURNAL ARTICLE

Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics

Dong-Hwan LimWoo Suk JungYoung Jin KimChanghwan Choi

Year: 2015 Journal:   Microelectronic Engineering Vol: 147 Pages: 206-209   Publisher: Elsevier BV
Keywords:
Atomic layer deposition High-κ dielectric Materials science Dielectric Equivalent oxide thickness Optoelectronics Lanthanum Lanthanum oxide Layer (electronics) Oxide Nanotechnology Gate oxide Chemistry Inorganic chemistry Transistor Electrical engineering Voltage Metallurgy

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10
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0.67
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Citation History

Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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