Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics

Dong-Hwan Lim; Woo Suk Jung; Young Jin Kim; Changhwan Choi

doi:10.1016/j.mee.2015.04.080

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Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics

Dong-Hwan Lim Woo Suk Jung Young Jin Kim Changhwan Choi

Year: 2015 Journal: Microelectronic Engineering Vol: 147 Pages: 206-209 Publisher: Elsevier BV

DOI: 10.1016/j.mee.2015.04.080

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Keywords:

Atomic layer deposition High-κ dielectric Materials science Dielectric Equivalent oxide thickness Optoelectronics Lanthanum Lanthanum oxide Layer (electronics) Oxide Nanotechnology Gate oxide Chemistry Inorganic chemistry Transistor Electrical engineering Voltage Metallurgy

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics

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