High rate etching of 6H–SiC in SF6-based magnetically-enhanced inductively coupled plasmas

D.W. Kim; Hyoyoung Lee; B.J. Park; H.S. Kim; Youngje Sung; Seung‐Hoon Chae; Young Wook Ko; G.Y. Yeom

doi:10.1016/j.tsf.2003.09.030

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High rate etching of 6H–SiC in SF6-based magnetically-enhanced inductively coupled plasmas

D.W. Kim Hyoyoung Lee B.J. Park H.S. Kim Youngje Sung Seung‐Hoon Chae Young Wook Ko G.Y. Yeom

Year: 2003 Journal: Thin Solid Films Vol: 447-448 Pages: 100-104 Publisher: Elsevier BV

DOI: 10.1016/j.tsf.2003.09.030

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Keywords:

Etching (microfabrication) Etch pit density Inductively coupled plasma Reactive-ion etching Dry etching Plasma etching Materials science Analytical Chemistry (journal) Copper Plasma Chemistry Nanotechnology Metallurgy Layer (electronics)

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

High rate etching of 6H–SiC in SF6-based magnetically-enhanced inductively coupled plasmas

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