Visible-blind ultraviolet photodetectors based onGaN <i>p</i> - <i>n</i> junctions

Q. Chen; M. Asif Khan; C. J. Sun; Jinhong Yang

doi:10.1049/el:19951190

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Visible-blind ultraviolet photodetectors based onGaN p - n junctions

Q. Chen M. Asif Khan C. J. Sun Jinhong Yang

Year: 1995 Journal: Electronics Letters Vol: 31 (20)Pages: 1781-1782 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:19951190

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Abstract

Visible-blind ultraviolet photodetectors based on GaN p-n junctions are reported. These detectors have an abrupt long-wavelength cutoff wavelength at ~370 nm and responsivity values as high as 0.09 A/W at 360 nm. The rise and fall times were measured to be 300 µs at 325 nm.

Keywords:

Photodetector Responsivity Ultraviolet Optoelectronics Wavelength Materials science Detector Cutoff frequency Visible spectrum Optics Cutoff Physics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Photocathodes and Microchannel Plates

Physical Sciences → Engineering → Biomedical Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Visible-blind ultraviolet photodetectors based onGaN p - n junctions

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