Microcrystalline Silicon Germanium Thin Films Prepared by Reactive Sputtering
Abstract
Microcrystalline silicon-germanium (μc-SiGe) films were fabricated on glass substrates by the RF reactive magnetron sputtering method using Ar and H2 mixtures. We could reduce the crystallization temperature to 100°C and obtained the photosensitivity in the μc-SiGe films with any Ge content from 0 to 100%. These results indicate that the H2 introduction into the sputtering gases has two important effects to decrease the crystallization temperature of the μc-SiGe films and to improve the film properties by the hydrogen termination of defects.
Metrics
Topics
Related Documents
Microcrystalline germanium thin films prepared by reactive RF sputtering
Norimitsu YoshidaY. HatanoMasao Isomura
Microcrystalline germanium thin films prepared by the reactive RF sputtering method
Masatoshi SugitaTomokazu SanoYuki TomitaMasao Isomura
Low Temperature Fabrication of Microcrystalline Silicon Germanium Films by RF Reactive Magnetron Sputtering
Isao NakamuraToru AjikiMasao Isomura
Microcrystalline silicon thin films prepared by RF reactive magnetron sputter deposition
M CerqueiraM AndritschkyL ReboutaJ FerreiraM F Da Silva, L YangS ChenWiedemanCatalanoR C RossR MessierS KomoriT FurukawaMiyasatoS IqbalA P VepfekWebbImuraPasztiG KotaiMezeyL ManuabaD PocsH HildbrandtStrusnyDa MinkovS V H TiensuuL E ErgunAlexanderJ F KanellisM MorhangeBalkanskiS IqbalA P VepfekP WebbCapezzutoM A BustarretM HachichaBrunelGleiterMvburuSwaneuoelRitherE Greene
Properties and photovoltaic applications of microcrystalline silicon films prepared by rf reactive sputtering
T. D. MoustakasH. Paul MaruskaR. Friedman