High-mobility thin-film transistors based on aligned carbon nanotubes
Kai XiaoYunqi LiuPingAn HuGui YuXianbao WangDaoben Zhu
Abstract
Thin-film transistors based on aligned carbon nanotubes (CNTs) were fabricated by directly growing highly ordered CNTs on silicon dioxide surface. The transistor shows a pronounced field effect. Electric transport through the aligned carbon nanotubes is dominated by the holes at room temperature. A hole mobility (μp) of the CNT thin-film transistor was estimated to be as high as 61.6 cm2/V s. Such a mobility is comparable to that of heavily doped n-Si and is larger than individual CNT field-effect transistor. Thus, it reveals a potential application of the aligned CNTs in electronics.
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