Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy

Abstract

Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitting diodes based on ZnO heterojunctions, but little is known of the band offsets of SiO2/ZnO. In this letter, energy band alignment of SiO2/ZnO interface was determined by x-ray photoelectron spectroscopy. The valence band offset ΔEV of SiO2/ZnO interface is determined to be 0.93±0.15 eV. According to the relationship between the conduction band offset ΔEC and the valence band offset ΔEV: ΔEC=EgSiO2−EgZnO−ΔEV, and taking the room-temperature band-gaps of 9.0 and 3.37 eV for SiO2 and ZnO, respectively, a type-I band-energy alignment of SiO2/ZnO interface with a conduction band offset of 4.70±0.15 eV is found. The accurate determination of energy band alignment of SiO2/ZnO is helpful for designing of SiO2/ZnO hybrid devices and is also important for understanding their carrier transport properties.