JOURNAL ARTICLE
Effect of annealing on the Schottky barrier height of Al/n-Si Schottky diodes after Ar+ ion bombardment
B. A. CarrE. FriedlandJ.B. Malherbe
Year: 1988 Journal: Journal of Applied Physics Vol: 64 (9)Pages: 4775-4777 Publisher: American Institute of Physics
Abstract
Aluminium Schottky contacts on n-Si were subjected to Ar+ ion bombardment, followed by a thermal anneal at 350 °C. This resulted in a marked improvement in the diode character of the implanted contacts. α-particle channeling analysis showed that very little damage remained after annealing, while AES showed only slight mixing of the Al and Si.
Keywords:
Schottky diode Annealing (glass) Schottky barrier Materials science Aluminium Ion Diode Metal–semiconductor junction Silicon Analytical Chemistry (journal) Optoelectronics Chemistry Metallurgy
Metrics
8
Cited By
0.42
FWCI (Field Weighted Citation Impact)
11
Refs
0.56
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon and Solar Cell Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
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