Mechanism of Memristor with TiO<sub>2-x</sub>/TiO<sub>2</sub>/TiO<sub>2+x</sub> Nano Thin Three Layers
Xiao Hui BaiLin Lin LiChun Ping Ai
Abstract
The paper is concerned on the properties of the new ideal circuit element, a memristor. We proposed memristor with nanothin three layers of Pt/ TiO 2-x /TiO 2 /TiO 2+x /Pt sandwiched structure in this paper,based on study of the working principles of HP memristor. As the new TiO 2+x layer and its expansion effect,the switching speed of the new structure memristor mentioned would be faster. The paper gives the test result and mechanism of the new structure memristor, such as characteristic analysis results of Pt nanowire, memristor, repetitiveness and V-I characteristic hysteretic curve of three layers memristor by using semiconductor tester.
Metrics
Topics
Related Documents
Fabrication Technology and Electronical Characteristics of Pt/TiO<sub>2-x</sub>/TiO<sub>2</sub>/TiO<sub>2+x</sub>/Pt Nano-Film Memristor
Zhiyuan LiQingkun LiDianzhong Wen
Preparation and Properties of Glasses Containing Large Amounts of TiO<SUB>2</SUB>in TiO<SUB>2</SUB>-P<SUB>2</SUB>O<SUB>5</SUB>-GeO<SUB>2</SUB> and Na<SUB>2</SUB>O-TiO<SUB>2</SUB>-P<SUB>2</SUB>O<SUB>5</SUB>-GeO<SUB>2</SUB> Systems
Akira KishiokaShinzi UEKIMamoru AizawaKiyoshi ItataniF. Scott Howell
Effect of Addition TiO<sub>2</sub> on Bi<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub>-B<sub>2</sub>O<sub>3</sub> Glasses
K. KirdsiriN. SrisittipokakunY. RuangtaweepK. BooninPichet LimsuwanJ. Kaewkhao
(TiO<sub>2</sub>)<sub>1–<i>x</i></sub>(TaON)<sub><i>x</i></sub> Solid Solution for Band Engineering\nof Anatase TiO<sub>2</sub>
Atsushi Suzuki (176891)Yasushi Hirose (1324221)Shoichiro Nakao (1324227)Tetsuya Hasegawa (1324230)