JOURNAL ARTICLE

Properties of boron-doped thin films of polycrystalline silicon

Souad Merabet

Year: 2013 Journal:   AIP conference proceedings Pages: 314-318   Publisher: American Institute of Physics

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation Souad Merabet; Properties of boron-doped thin films of polycrystalline silicon. AIP Conf. Proc. 16 December 2013; 1569 (1): 314–318. https://doi.org/10.1063/1.4849283 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioAIP Conference Proceedings Search Advanced Search |Citation Search

Keywords:
Materials science Boron Doping Silicon Polycrystalline silicon Optoelectronics Crystallite Thin film Engineering physics Composite material Nanotechnology Metallurgy Thin-film transistor Layer (electronics) Chemistry Engineering

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Topics

Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Thin-Film Transistor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon Nanostructures and Photoluminescence
Physical Sciences →  Materials Science →  Materials Chemistry

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