JOURNAL ARTICLE
GaN-Based Light-Emitting Diodes and Laser Diodes, and Their Recent Progress
Shin‐ichi NagahamaNaruhito IwasaMasayuki SenohToshio MatsushitaYasunobu SugimotoHiroyuki KiyokuTokuya KozakiMakoto SanoHiroaki MatsumuraHitoshi UmemotoKazuyuki ChochoTomoya YanamotoTakashi Mukai
Year: 2001 Journal: physica status solidi (a) Vol: 188 (1)Pages: 1-7 Publisher: Wiley
Abstract
It is recognized that GaN-based semiconductor is the most excellent material for short wavelength emitting devices. In this paper, we review the development of InGaN light emitting diodes (LEDs) and laser diodes (LDs). Additionally, purely-blue LDs are demonstrated, and the emission-wavelength dependence of the threshold current density is studied.
Keywords:
Optoelectronics Diode Light-emitting diode Materials science Laser Wavelength Semiconductor Semiconductor laser theory Wide-bandgap semiconductor Optics Physics
Metrics
34
Cited By
2.26
FWCI (Field Weighted Citation Impact)
24
Refs
0.91
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Photocathodes and Microchannel Plates
Physical Sciences → Engineering → Biomedical Engineering
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