JOURNAL ARTICLE

Temperature dependence of photoluminescence from high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy

Masataka HigashiwakiS. ShimomuraS. Hiyamizu

Year: 1998 Journal:   Physica E Low-dimensional Systems and Nanostructures Vol: 2 (1-4)Pages: 959-963   Publisher: Elsevier BV
Keywords:
Photoluminescence Molecular beam epitaxy Materials science Substrate (aquarium) Quantum well Optoelectronics Gallium arsenide Condensed matter physics Intensity (physics) Epitaxy Optics Layer (electronics) Physics Nanotechnology Laser

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0.67
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Citation History

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Quantum and electron transport phenomena
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Nanowire Synthesis and Applications
Physical Sciences →  Engineering →  Biomedical Engineering
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