JOURNAL ARTICLE
Temperature dependence of photoluminescence from high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy
Masataka HigashiwakiS. ShimomuraS. Hiyamizu
Year: 1998 Journal: Physica E Low-dimensional Systems and Nanostructures Vol: 2 (1-4)Pages: 959-963 Publisher: Elsevier BV
Keywords:
Photoluminescence Molecular beam epitaxy Materials science Substrate (aquarium) Quantum well Optoelectronics Gallium arsenide Condensed matter physics Intensity (physics) Epitaxy Optics Layer (electronics) Physics Nanotechnology Laser
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4
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0.70
FWCI (Field Weighted Citation Impact)
11
Refs
0.67
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Citation History
Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Quantum and electron transport phenomena
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Nanowire Synthesis and Applications
Physical Sciences → Engineering → Biomedical Engineering
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DISSERTATION
High-Density GaAs/(GaAs)m(AlAs)n Quantum Wires Grown on (775) B-Oriented GaAs Substrates by Molecular Beam Epitaxy
University: OUKA (Osaka University Knowledge Archive) (Osaka University) Year: 1998
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