Bin XuJianhua DuT. J. KlemmerR. SchadJ. A. BarnardW. D. Doyle
Uniaxial Co 80 Pt 20 epitaxial films with in-plane anisotropy were prepared by dc sputter deposition using W/Ag templates on H-terminated Si(110) substrates. The epitaxial relationship as a function of the CoPt thickness, studied by electron and X-ray diffraction, is complex for CoPt thickness < 5 nm. For CoPt thickness > 5 nm, the epitaxial relationship was found to be CoPt(1010)[0001] || W(112)[110] || Ag(110)[001]|| Si(110)[001]. Anisotropy constants were measured using in-plane torque curves and the initial magnetization curves along the hard axis. For 10 to 20 nm thick Co 80 Pt 20 , Κ1 was found to be ~ 9 × 10 6 erg/cc and Κ2 was negligible.
J. R. ChildressOlivier DurandF. Nguyen VanPierre GaltierR. BisaroA. Schuhl
Eric E. FullertonJ. S. JiangChristine RehmC. H. SowersS. D. BaderJay B. PatelXian Wu
Haozhe YangMin ZengXinxin ZhangJue LiuRonghai Yu
Wen ZhangSimon A. MortonPing Kwan Johnny WongBin LüYongbing XuM. P. de JongWilfred G. van der WielG. van der Laan
Darren DaleG. HuVincent BalbarinY. Suzuki