Relaxor properties of lanthanum-doped bismuth layer-structured ferroelectrics

Abstract

Several polycrystalline samples of bismuth layer-structured ferroelectrics (BLSF) family doped by lanthanum, Bi4−xLaxTi3O12, SrBi4−xLaxTi4O15, Sr2Bi4−xLaxTi5O18, and (Bi,La)4Ti3O12-Sr(Bi,La)4Ti4O15, were prepared by the traditional solid-state reaction method. Their ferroelectric and dielectric properties were investigated. The dielectric measurement data showed that the content of lanthanum determined the ferroelectric characteristics of the compounds. In each series samples, they behaved as normal ferroelectrics for small x, but all of them tended to become relaxors when x was increased. The critical value of the La content causing relaxor characteristics is different for the different BLSFs due to the difference of the number of strontium atoms in their crystal structures. The appearance of the relaxor behavior was attributed to a ferroelectric microdomain state induced by random fields.