Silicon Carbide Light-Emitting Diodes

R.M. Potter; John M. Blank; Arrigo Addamiano

doi:10.1063/1.1657967

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Silicon Carbide Light-Emitting Diodes

R.M. Potter John M. Blank Arrigo Addamiano

Year: 1969 Journal: Journal of Applied Physics Vol: 40 (5)Pages: 2253-2257 Publisher: American Institute of Physics

DOI: 10.1063/1.1657967

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Abstract

Electroluminescent diodes were prepared by the simultaneous diffusion of boron and aluminum at 2150° to 2250°C into nitrogen-doped, n-type 6H SiC crystals. These diodes exhibit a typical brightness of 50 ft·L (170 nit) at a current density of 5 A/cm2 for temperatures of 25° to above 200°C. The results of various measurements on these diodes are presented and the anomalous nature of the diffusion is discussed.

Keywords:

Diode Electroluminescence Materials science Optoelectronics Silicon carbide Brightness Boron Light-emitting diode Doping Silicon Diffusion Current density Wide-bandgap semiconductor Optics Nanotechnology Chemistry Metallurgy

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Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Carbide Light-Emitting Diodes

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