Metal-Organic Chemical Vapor Deposition (MOCVD) of GeSbTe-based Chalcogenide Thin Films

Gary S. Tompa; Shangzhu Sun; Catherine E. Rice; J. D. Cuchiaro; Edwin Dons

doi:10.1557/proc-0997-i10-08

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Metal-Organic Chemical Vapor Deposition (MOCVD) of GeSbTe-based Chalcogenide Thin Films

Gary S. Tompa Shangzhu Sun Catherine E. Rice J. D. Cuchiaro Edwin Dons

Year: 2007 Journal: MRS Proceedings Vol: 997 Publisher: Cambridge University Press

DOI: 10.1557/proc-0997-i10-08

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Keywords:

Materials science Metalorganic vapour phase epitaxy Chalcogenide Chemical vapor deposition Thin film Sputtering Optoelectronics Wafer Auger electron spectroscopy Nanotechnology Layer (electronics) Epitaxy

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Phase-change materials and chalcogenides

Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Metal-Organic Chemical Vapor Deposition (MOCVD) of GeSbTe-based Chalcogenide Thin Films

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