Optical, electrical and dielectric properties of TiO2–SiO2 films prepared by a cost effective sol–gel process

M. Vishwas; K. Narasimha Rao; K.V. Arjuna Gowda; R.P.S. Chakradhar

doi:10.1016/j.saa.2011.08.009

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Optical, electrical and dielectric properties of TiO2–SiO2 films prepared by a cost effective sol–gel process

M. Vishwas K. Narasimha Rao K.V. Arjuna Gowda R.P.S. Chakradhar

Year: 2011 Journal: Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy Vol: 83 (1)Pages: 614-617 Publisher: Elsevier BV

DOI: 10.1016/j.saa.2011.08.009

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Keywords:

Materials science Dielectric Sol-gel Silicon dioxide Titanium dioxide Refractive index Spin coating Silicon Thin film Titanium Band gap Chemical engineering Composite material Optoelectronics Nanotechnology Metallurgy

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

TiO2 Photocatalysis and Solar Cells

Physical Sciences → Energy → Renewable Energy, Sustainability and the Environment

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Optical, electrical and dielectric properties of TiO2–SiO2 films prepared by a cost effective sol–gel process

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